METHOD FOR FORMING POLYCRYSTALLINE SILICON THIN FILM AND MULTILAYER CONSTRUCTION OF POLYCRYSTALLINE SILICON THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a polycrystalline silicon thin film and a multilayer construction of the polycrystalline silicon thin film by which compatibility between the reduction in the irradiation energy of the excimer laser light and the improvement of the quality of the polycrystalline silicon thin film is ensured. SOLUTION: The method for forming the polycrystalline silicon thin film is provided with a step of forming a preliminary polycrystalline silicon thin film 10 on a substrate at least whose surface exhibits insulating property, a step of laminating an amorphous silicon thin film 11 on the preliminary polycrystalline silicon thin film 10 and a step of poly-crystallizing the amorphous silicon thin film 11 by using the preliminary polycrystalline silicon thin film 10 as a core and by irradiating the amorphous silicon thin film 11 with excimer laser light.