| 摘要 |
PURPOSE: A chemical vapor deposition apparatus is provided which is capable of solving problems of deposition of a metallic thin film or formation of particles due to decomposition of a precursor at a precursor storage container or a precursor delivery pipe. CONSTITUTION: The chemical vapor deposition apparatus comprises a precursor storage container(11) in which metallic atoms are contained, and which is capable of storing a precursor having selective deposition characteristics according to a kind of a substrate; and a precursor delivery unit delivering vapor of the precursor from the precursor storage container(11) into a chamber(13), wherein the precursor storage container(11) and the precursor delivery unit are made of a material which is neither decomposed by nor reacted with the precursor, the precursor is DMAH(dimethylaluminum hydride), DMEAA(dimethylethylamine alane), TMA(trimethyl aluminum), TMAA(trimethylamine alane), TEAA(triethylamine alane), MPA(methylpyrrolidine alane), Cu(HFAC)2, or Cu(HFAC)(TMVS), the precursor delivery unit is a gas line(15), valve(17), mass flow controller, vapor flow controller(19), or liquid delivery system, the material which is neither decomposed by nor reacted with the precursor is a dielectric ceramic material such as silicon dioxide(SiO2), alumina(Al2O3), zirconia(ZrO2) or TiO2(titania), or an organic material such as Teflon, the material which is neither decomposed by nor reacted with the precursor is formed by coating a dielectric protection film on a metallic material, the dielectric protection film is made of a ceramic material or an organic material such as Teflon, the material which is neither decomposed by nor reacted with the precursor is formed by coating a protection film obtained by coating a film material having strong oxidative property on a metallic material, and wherein the film material having strong oxidative property is Al, Si, Ti, Zr, Y, Ni, or Co.
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