发明名称 |
Process and apparatus for producing a planar body of an oxide single crystal |
摘要 |
In a process for producing a planar body of an oxide single crystal with a mu pulling-down method, a shoulder portion having a larger width is grown without any polycrystal regions, cracks or crystal deteriorations in a central portion of the planar body. A raw material of the oxide single crystal is melted in a crucible. A seed crystal is contacted to a melt of the raw material near an opening of a nozzle 13 of the crucible. Then, the melt 18 is drawn from the opening by pulling down the seed crystal to form a planar body 14A. A temperature distribution of the nozzle 13 in a direction perpendicular to the drawing direction B is controlled by supplying heat to the nozzle 13 and/or by removing heat from the nozzle 13.
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申请公布号 |
US2002029736(A1) |
申请公布日期 |
2002.03.14 |
申请号 |
US20010897797 |
申请日期 |
2001.07.02 |
申请人 |
YOKOYAMA TOSHIHISA;MURASATO MASAHIRO;IMAI KATSUHIRO;IMAEDA MINORU |
发明人 |
YOKOYAMA TOSHIHISA;MURASATO MASAHIRO;IMAI KATSUHIRO;IMAEDA MINORU |
分类号 |
C30B15/00;C30B15/08;(IPC1-7):C30B15/16;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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