| 摘要 |
There are contained the steps of leaving selectively the first insulating film that covers respective gate electrodes in the first region and the second region and the semiconductor substrate on side surfaces of the second gate electrode by etching back the first insulating film only in the second region, forming the second insulating film that is formed of same material as the first insulating film in the first region and the second region, forming the third insulating film whose selective etching to the first insulating film can be performed, forming holes to expose the semiconductor substrate by etching the first to third insulating films between the gate electrode in the first region, forming plugs in the holes, forming the fourth insulating film to cover the plugs and the third insulating film, forming a plurality of holes in the first region and the second region by patterning the fourth insulating film to the second insulating film.
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