| 发明名称 |
Stepped substrate semiconductor laser for emitting light at slant portion |
| 摘要 |
<p>An S<3>-type laser diode includes a p-type cladding layer (36) formed on an active layer (35) such that an inclined surface region thereof has a carrier concentration level of 1 x 10<18> cm<-3> or more, wherein the p-type cladding layer (36) has a thickness of 0.35 mu m or more. <IMAGE></p> |
| 申请公布号 |
EP1187277(A2) |
申请公布日期 |
2002.03.13 |
| 申请号 |
EP20010307503 |
申请日期 |
2001.09.04 |
| 申请人 |
FUJITSU QUANTUM DEVICES LIMITED |
发明人 |
ANAYAMA, CHIKASHI |
| 分类号 |
H01S5/20;H01S5/223;H01S5/30;H01S5/343;(IPC1-7):H01S5/223 |
主分类号 |
H01S5/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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