发明名称 POSITIVE TYPE RESIST COMPOSITION FOR ELECTRON BEAM OR X- RAY
摘要 PROBLEM TO BE SOLVED: To provide a positive type resist composition for electron beams or X-rays which enhances performance in the microfabrication of a semiconductor device using electron beams or X-rays and satisfies such characteristics as sensitivity, resolution and resist shape when electron beams or X-rays are used. SOLUTION: The positive type resist composition contains (A) a resin containing repeating units each having a group capable of generating an acid under electron beams or X-rays as a constitutive component.
申请公布号 JP2002072483(A) 申请公布日期 2002.03.12
申请号 JP20000267329 申请日期 2000.09.04
申请人 FUJI PHOTO FILM CO LTD 发明人 AOSO TOSHIAKI;ADEGAWA YUTAKA
分类号 G03F7/039;C08F212/14;C08F220/10;C08F220/56;C08K5/00;C08L25/18;G03F7/004;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址