发明名称 |
POSITIVE TYPE RESIST COMPOSITION FOR ELECTRON BEAM OR X- RAY |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive type resist composition for electron beams or X-rays which enhances performance in the microfabrication of a semiconductor device using electron beams or X-rays and satisfies such characteristics as sensitivity, resolution and resist shape when electron beams or X-rays are used. SOLUTION: The positive type resist composition contains (A) a resin containing repeating units each having a group capable of generating an acid under electron beams or X-rays as a constitutive component. |
申请公布号 |
JP2002072483(A) |
申请公布日期 |
2002.03.12 |
申请号 |
JP20000267329 |
申请日期 |
2000.09.04 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
AOSO TOSHIAKI;ADEGAWA YUTAKA |
分类号 |
G03F7/039;C08F212/14;C08F220/10;C08F220/56;C08K5/00;C08L25/18;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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