| 摘要 |
<p>PROBLEM TO BE SOLVED: To make reducible plasma damage to a TFT(thin film transistor) under a pixel electrode even if the pixel electrode is formed by dry etching, when a TFT panel having a structure where the pixel electrode consisting of ITO is positioned on the tip side of the TFT is manufactured. SOLUTION: A large sized substrate 11 having a size corresponding to the size of the plural TFT panels and consisting of glass or the like is provided with nine TFT panel forming regions 12 in total consisting of three rows and three columns. In this case, a TFT panel non-forming region has width D1 of 2 cm (or more) and width D2 of 1 cm (or more). And, no resist pattern is formed on the upper surface of the TFT panel non-forming region of an ITO layer 36 formed on the entire surface of the large sized substrate 11. Thereby, the ITO etching total area becomes relatively large and amounts to 50% or more of the surface area of the substrate. Thus, the plasma damage to the TFT under the pixel electrode can be reduced even if the dry etching is performed using an RIE device.</p> |
