| 摘要 |
PURPOSE: A method for forming a selective epitaxial silicon layer is provided to be capable of restraining growth of a native oxide layer on an active region. CONSTITUTION: After forming a transistor on an active region of a silicon substrate(1), an insulating spacer(6) is formed on a gate and at both sidewalls of the gate. A selective epitaxial silicon layer(8) is formed on a source/drain region(7) by LPCVD(Low Pressure Chemical Vapor Deposition) having a load-rock chamber. At this time, a polysilicon layer is simultaneously formed on a field oxide layer(2) and the insulating spacer(6). Then, the polysilicon layer is selectively removed by using mixed solutions of HNO3, CH3COOH, and HF.
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