PLASMA GENERATING EQUIPMENT, DENSE AND HARD THIN FILM FORMING EQUIPMENT USING THE SAME, AND HARD THIN FILM FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a film forming method and a film forming equipment, wherein reduction of absorption efficiency of RF power can be prevented while a dense and hard thin film similar to BN film and containing lots of SP3 microstructures can be produced. SOLUTION: Plasma generating chamber is located adjacent to a film forming chamber containing a substrate inside and retainable in a high vacuum. In the plasma generating chamber, a high-frequency antenna used for generating plasma and a target composed of the material essentials for the dense and hard thin film are respectively arranged. Generation of high-density plasma under the arrangements enables to introduce the atoms of target materials sputtered from the target to the substrate in ionized state.