| 发明名称 |
NITRIDE SEMICONDUCTOR LASER |
| 摘要 |
PURPOSE: To reduce the threshold current density of a semiconductor laser using a gallium nitride-based semiconductor material. CONSTITUTION: The semiconductor laser has a structure in which a gallium nitride-based semiconductor layer containing an n-type clad layer 22 and a multiple quantum well layer 24 containing an InxAlyGa1-x-yN (0<x<1, 0 <= y <= 0.2) light emitting layer is laminated upon a low-dislocation n-type GaN substrate 21. The threshold mode gain per one quantum well of the quantum well layer 24 is adjusted to <= 12 cm-1 and the standard deviation of the microscopic fluctuation of the band gap energy of the light emitting layer is controlled to 75-200 meV.
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| 申请公布号 |
KR20020018633(A) |
申请公布日期 |
2002.03.08 |
| 申请号 |
KR20010053739 |
申请日期 |
2001.09.01 |
| 申请人 |
NEC CORPORATION |
发明人 |
KURAMOTO MASARU;NIDO MASAAKI;YAMAGUCHI ATSUSHI |
| 分类号 |
H01S5/30;H01S5/028;H01S5/323;H01S5/343;(IPC1-7):H01S5/30 |
主分类号 |
H01S5/30 |
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