METHOD FOR ETCHING INSULATION LAYER HAVING HIGH ETCH RATE

摘要

PURPOSE: A method for etching an insulation layer having a high etch rate is provided to shorten an interval of time taken for a fabricating process and to increase production yield, by using an etch condition of high pressure, high power and high CF4 gas. CONSTITUTION: The etch rate is increased to improve process efficiency in dry-etching the insulation layer. The insulation layer is etched in a condition that the power is from about 1000 to 1500 watt, the pressure is from about 450 to 800 millitorr and the CF4 gas is from about 80 to 200 standard cubic centimeters per minute(sccm). The etch gas further includes argon from 100 to 900 sccm.