发明名称 METHODS AND APPARATUS FOR ADJUSTING BEAM PARALLELISM IN ION IMPLANTERS
摘要 <p>Methods and apparatus for implanting ions in a workpiece, such as a semiconductor wafer, include generating an ion beam, measuring parallelism of the ion beam, adjusting the ion beam for a desired parallelism based on the measured parallelism, measuring a beam direction of the adjusted ion beam, orienting a workpiece at an implant angle referenced to the measured beam direction and performing an implant with the workpiece oriented at the implant angle referenced to the measured beam direction. The implant may be performed with a high degree of beam parallelism.</p>
申请公布号 WO2002019374(A2) 申请公布日期 2002.03.07
申请号 US2001022392 申请日期 2001.07.13
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