POSITIVE-WORKING PHOTORESIST COMPOSITION AND RESIST PATTERNING METHOD USING THE SAME

摘要

PURPOSE: A new improved positive-working photoresist composition having excellent storage stability to provide a patterned resist layer of good pattern resolution is provided. Therefore it is suitable for pattern size diminution by the thermal flow process after development. CONSTITUTION: This crosslinked chemical-amplification positive-working photoresist composition comprises: (A) 100 parts by weight of a hydroxystyrene-based polymer obtained by substitution of a hydrogen atom of at least a part of a phenolic hydroxyl group or a carboxyl group with by acid-dissociable groups; (B) 1 to 20 parts by weight of a radiation-sensitive acid-generating compound; (C) 0.1 to 25 parts by weight of a crosslinkable polyvinyl ether compound; (D) 0.01 to 5 parts by weight of carboxylic acid comprising only a carbon, oxygen and hydrogen atom; and (E) 0.01 to 1 parts by weight of an amine compound.