| 摘要 |
<p>A porous siliceous film which stably exhibits a low permittivity and is so excellent in both mechanical strengths and various chemical resistances as to withstand CMP and other up-to-date fabrication processes for integrated circuits and thus suitable for an interlayer dielectric film. This film can be formed by firing a coating of a composition comprising a polyalkylsilazane and a polyacrylate ester or a polymethacrylate ester and is characterized by a relative permittivity below 2.5.</p> |
