发明名称 IMAGE SENSOR HAVING LIGHT COLLECTING LAYER MADE OF AIR INSIDE TRENCH AND FABRICATING METHOD THEREOF
摘要 PURPOSE: An image sensor having a light collecting layer made of air inside a trench is provided to improve transmissivity by forming a color filter and the light collecting layer by one process for forming a photoresist pattern, and to simplify a fabricating process by omitting a process for forming a planarization layer necessary for a micro lens. CONSTITUTION: An interlayer dielectric covers an optical sensing unit. A trench(35) overlaps the optical sensing unit, formed inside the interlayer dielectric. A color filter pattern(36A) of a curved type covers the inlet of the trench. The light collecting layer is made of the air inside the trench. The color filter pattern is composed of photoresist. The optical sensing unit is a photodiode(33).
申请公布号 KR20020017840(A) 申请公布日期 2002.03.07
申请号 KR20000051354 申请日期 2000.08.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, CHAE SEONG
分类号 G02B5/20;G02B3/00;H01L21/00;H01L27/14;H01L27/146;H01L29/06;H01L31/0232;H01L31/062;H01L31/113;H04N5/335;H04N5/369;H04N5/374 主分类号 G02B5/20
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