Semiconductor device with an improved bonding pad structure and method of bonding bonding wires to bonding pads

摘要

The present invention provides a bonding structure between a bonding pad and a bonding portion of a bonding wire made of an Au-base material, wherein said bonding pad further comprises: a base layer; at least a barrier layer overlying said base layer; and a bonding layer overlying said at least barrier layer, said bonding layer including an Al-base material, and wherein said bonding portion of said bonding wire is buried in said bonding layer, and an Au-Al alloy layer extends on an interface between said bonding portion and said bonding layer, and a bottom of said Au-Al alloy layer is in contact with or adjacent to an upper surface of said barrier layer.