SUBSTRATE POLISHING METHOD

摘要

There is disclosed a polishing technology without generation of corrosion on an Al-Cu film formed damascene wiring on a semiconductor substrate by the CMP technology. A chelating agent which forms a chelate compound together with Al and Cu, or a chemical substance which is absorbed onto Al and Cu is added into a slurry to polish, and then a thin film of the chelate compound or the chemical substance is formed on the Al-Cu film. This thin film can suppress movement of electrons (cell reaction) from Al to Cu caused in polishing and suppress elution of Al from the Al-Cu film.