发明名称 Laser fuseblow protection method for silicon on insulator (SOI) transistors
摘要 A method and apparatus are provided for laser fuseblow protection in transistors, such as silicon-on-insulator (SOI) transistors. The transistors are connected to a fuse. A pair of diodes are connected in series between a high supply and ground. A common connection of the series connected pair of diodes is connected to a common connection of the fuse and transistors. A charge is shunted to the high supply or ground by the pair of diodes with a first voltage a set value above the high supply and a second voltage a set value below the ground. A pair of protection diodes are provided on each side of the fuse with transistors. The transistors are either connected to one side of the fuse or to both sides of the fuse.
申请公布号 US2002027248(A1) 申请公布日期 2002.03.07
申请号 US20010925918 申请日期 2001.08.09
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION. 发明人 AIPPERSPACH ANTHONY GUS;CHRISTENSEN TODD ALAN
分类号 H01H85/00;H01L21/336;H01L23/525;H01L27/01;H01L27/02;H01L27/12;H01L29/00;H03K17/0812;H03K17/0814;(IPC1-7):H01L27/01 主分类号 H01H85/00
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