发明名称 |
Method and apparatus for forming improved metal interconnects |
摘要 |
Methods of forming copper interconnects free from via-to-via leakage currents and having low resistances are disclosed. In a first aspect, a barrier layer is deposited on the first metal layer prior to copper oxide sputter-etching to prevent copper atoms from reaching the interlayer dielectric and forming via-to-via leakage current paths therein. In a second aspect, a capping dielectric barrier layer is deposited over the first metal layer prior to sputter etching. During sputter-etching, the capping dielectric barrier layer redistributes on the sidewalls of the interlayer dielectric, preventing sputter-etched copper atoms from reaching the interlayer dielectric and forming via-to-via leakage paths therein. In a third aspect, both a capping dielectric barrier layer and a barrier layer are deposited over the first metal layer prior to sputter-etching to prevent copper atoms produced during sputter-etching from reaching the interlayer dielectric and forming via-to-via leakage paths therein.
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申请公布号 |
US2002028576(A1) |
申请公布日期 |
2002.03.07 |
申请号 |
US20010928891 |
申请日期 |
2001.08.13 |
申请人 |
HASHIM IMRAN;CHIANG TONY;CHIN BARRY |
发明人 |
HASHIM IMRAN;CHIANG TONY;CHIN BARRY |
分类号 |
H01L21/285;H01L21/28;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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