| 摘要 |
A method of programming a flash memory module, wherein a plurality of flash memory cells are arrayed in a substrate; each memory cell having a source, a drain, a floating gate, and a control gate, which are separated from one another on the substrate, an insulating layer formed on the substrate between the source and drain, and also separating the source/drain and control gate, and a floating gate wherein a detrapping process with appropriate bias conditions is applied either after an erase step for erasing data written to the flash memory cell or after a write step for writing predetermined data, in order to remove electrons trapped in the insulating layer excluding the floating gate. During the detrapping process, electrons trapped in a region excluding a floating gate are removed, thereby suppressing degradation caused by repeated write/erase operations.
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