| 摘要 |
PURPOSE: A method and apparatus for reading memory cells of resistive cross point array is provided to reduce the amount of time for sensing the resistance states of the memory cells. CONSTITUTION: A sense amplifier(24) applies an operating potential to a selected bit line and an equal potential to a subset of unselected lines during a read operation on a memory cell(12) in a resistive cross point array(10) of an information storage device(8). Before a resistance state of the selected memory cell(12) is sensed, however, an input of the sense amplifier(24) is forced to a known, consistent condition. The sense amplifier(24) input is forced to the known, consistent condition by pulling up the input to an array voltage(Vs).
|
