| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to effectively prevent voids in an interlayer dielectric by maximizing the distance between gate lines using a buffer oxide layer by a thermal oxidation. CONSTITUTION: An isolation layer(32) of an STI(Shallow Trench Isolation) structure is formed in a field region of a semiconductor substrate(31). A gate oxide(33) and a gate electrode(34) are sequentially formed in an active region of the substrate. An LDD(Lightly Doped Drain) region(36) is formed in the substrate by using the gate electrode(34) as a mask. Spacers(37) are formed at both sidewalls of the gate electrode(34). Then, source and drain regions(38) are formed by implanting heavily doped dopants into the substrate using the spacers(37) and the gate electrode(34) as a mask. By performing a thermal oxidation, a buffer oxide layer(39) is grown on the exposed substrate. Then, an interlayer dielectric(41) is formed on the entire surface of the resultant structure without generating voids.
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