发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES WITH SEMICONDUCTOR ELEMENTS FORMED IN A LAYER OF SEMICONDUCTOR MATERIAL GLUED ON A SUPPORT WAFER |
摘要 |
<p>A method of manufacturing a semiconductor device which starts with a semiconductor wafer which is provided with a layer of semiconductor material lying on an insulating layer at a first side. Semiconductor elements and conductor tracks are formed on this first side of the semiconductor wafer. Then the semiconductor wafer is fastened with this first side to a support wafer, and material is removed from the semiconductor wafer from its other, second side until the insulating layer has been exposed. The method starts with a semiconductor wafer whose insulating layer is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.</p> |
申请公布号 |
EP0746875(B1) |
申请公布日期 |
2002.03.06 |
申请号 |
EP19950936730 |
申请日期 |
1995.11.29 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
DEKKER, RONALD;MAAS, HENRICUS, GODEFRIDUS, RAFAEL;HAHN, WILHELM, STEFFEN |
分类号 |
H01L21/02;H01L21/20;H01L21/336;H01L21/58;H01L21/60;H01L21/68;H01L23/498;H01L27/12;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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