发明名称 Semiconductor laser with tunable gain spectrum
摘要 Semiconductor laser with a tunable gain spectrum. Said laser comprises an active zone having at least one active quantum well (AQW), which emits a laser radiation during the introduction of carriers into the active zone and at least one collection quantum well (CQW1, CQW2) on either side of the active well, for collecting and confining part of the carriers introduced. Means for distributing carriers in the collection wells are provided for creating a space charge field for modifying, during the emission of radiation and by an electrooptical effect, the gain spectrum of said active well. Application to optical telecommunications.
申请公布号 US6353624(B1) 申请公布日期 2002.03.05
申请号 US19990397106 申请日期 1999.09.16
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 PELEKANOS NIKOLAOS;ORTIZ VALENTIN;MULA GUIDO
分类号 H01S5/343;H01S5/06;H01S5/062;H01S5/323;H01S5/34;H01S5/40;(IPC1-7):H01S5/32 主分类号 H01S5/343
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