METHOD FOR FORMING INTERCONNECTION LAYER OF SEMICONDUCTOR DEVICE USING DAMASCENE PROCESS

摘要

PURPOSE: A method for forming an interconnection layer of a semiconductor device using a damascene process is provided to remarkably reduce parasitic capacitance between interconnections of the semiconductor device by eliminating an etch stop layer of high permittivity under an insulation layer. CONSTITUTION: The etch stop layer(110') is formed on a semiconductor substrate(100). The etch stop layer not exposed to an interconnection region is removed. The insulation layer(310) is formed on the entire surface. The insulation layer is etched to form a trench exposing the non-etched etch stop layer. The interconnection layer(510) composed of a metal layer is formed in the trench.