发明名称 |
Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
摘要 |
A method comprises providing a population of catalyst particles and growing a population of semiconductor nanowires catalytically from the population of catalyst particles. The nanowires of the population have a variation in diameter of less than about 20%, and the nanowires of the population have a smallest width less than 500 nanometers. Preferably the nanowires of the population have a variation in diameter of less than about 10%. |
申请公布号 |
AU8664901(A) |
申请公布日期 |
2002.03.04 |
申请号 |
AU20010086649 |
申请日期 |
2001.08.22 |
申请人 |
PRESIDENT AND FELLOWS OF HARVARD COLLEGE |
发明人 |
CHARLES M LIEBER;YING CUI;XIANGFENG DUAN;YUNG-SHENG HUANG |
分类号 |
H01L29/73;C30B11/00;C30B25/00;G01N27/12;G01N27/414;G01N33/543;G11C13/02;H01L21/329;H01L21/331;H01L23/532;H01L27/10;H01L29/06;H01L29/207;H01L29/267;H01L29/88;H01L33/06;H01L33/18;H01L51/00;H01L51/30 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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