| 摘要 |
PROBLEM TO BE SOLVED: To allow a signal electric-charge transfer at high speed with low noise. SOLUTION: There are provided a semiconductor substrate 1 of one conductive type, an electric-charge transfer region 5 of a conductive type opposite to that of the semiconductor substrate 1 which is formed in the semiconductor substrate 1 while being bonded to it to form a diode, a signal electric-charge input part 6 for inputting a signal electric-charge in the electric-charge transfer region 5, a signal electric-charge output part 9 for accumulating the signal electric-charge transferred from the electric-charge transfer region 5, and a plurality of electric-potential supply means 12, 13, 14, and 15 for providing an electric-potential gradient to the semiconductor substrate 1. The electric- potential gradient formed by the plurality of electric-potential supply means transfers the signal electric-charge in the electric-charge transfer region 5.
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