| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of a fine crystalline film which enables formation of a fine crystalline film having high crystal volume fraction, that is, high strength ratio (I520/I480) for improving performance of a thin film semiconductor device wherein a fine crystalline film is used. SOLUTION: In a method for manufacturing a fine crystalline film in a major surface of a fine crystalline film formation substrate 2, raw gas is introduced for film formation to a film formation chamber with a plate-like ground electrode 3 disposed in one side of the substrate 2, a plate-like high frequency electrode 1 disposed parallel to the other side, and a raw gas supply port. Then, a fine crystalline film is formed under the condition that both light emitting parts 7 generated near a high frequency electrode and that generated near a ground electrode come in adjacent situation or overlap with each other, by reducing a clearance between both electrodes or reducing a film formation pressure.</p> |
