发明名称 |
METHOD FOR USING THIN SPACERS AND OXIDATION IN GATE OXIDES |
摘要 |
A method for forming a lightly doped drain (LDD) field effect transistor uses very thin first sidewall spacers over the gate sidewalls, in which annealing/oxidation of the sidewall spacers results in (a) the rounding of corner portions of the gate structure sidewalls adjacent the gate oxide, and (b) a very low thermal consumption comprising a small portion of the total thermal budget. Secondary sidewall spacers of greater width are then formed to act as offsets in the introduction of N-type dopants into the substrate to form source and drain contact regions. The method may be varied to accommodate various design configurations and size scaling.
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申请公布号 |
US2002025642(A1) |
申请公布日期 |
2002.02.28 |
申请号 |
US20010840855 |
申请日期 |
2001.04.24 |
申请人 |
AKRAM SALMAN;DITALI MOHAMED A. |
发明人 |
AKRAM SALMAN;DITALI MOHAMED A. |
分类号 |
H01L21/28;H01L21/336;H01L21/8242;H01L29/423;H01L29/51;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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