METHOD FOR REDUCING SEMICONDUCTOR RESISTANCE, DEVICE FOR REDUCING SEMICONDUCTOR RESISTANCE AND SEMICONDUCTOR ELEMENT

摘要

The electric resistance of a p-type semiconductor, or the drive voltage of a semiconductor element for effecting light emitting/light receiving is efficiently reduced. An ion plasma type electron beam irradiator (100) generates a wide-irradiation-area electron beam. The generated electron beam penetrates a thin metal sheet (108) that shields the outside air and forms the outer surface of a beam extracting window (107), and is emitted to the outside. A p-type semiconductor is disposed approximately in parallel to the metal sheet (108) with a gap of about 20 mm therebetween and directly below the window (107). An electron beam plane-emitted on a p-type semiconductor in such a method can reduce the resistance of the p-type semiconductor effectively in about three minutes, a very shorter time than that required for a conventional electron beam irradiator, because this method eliminates physical requirements that compulsorily restrict the area of the window (107) to increase the width of an electron beam and thus eliminate the need of many repeated scanning operations over an extended time.