发明名称 Power amplifier module
摘要 There is provided a power amplifier module which is provided with a function of protecting an amplifying device against destruction caused by a standing wave by reflection from an antenna end in load variation, having a high tolerance level of device destruction and is highly efficient. Overcurrent flowing at a base of a final stage amplifying portion GaAs-HBT in load variation is detected and canceled and collector current is restrained to thereby prevent an increase in output and prevent destruction of GaAs-HBT. Further, by also using a function of successively lowering idling current when power source voltage is elevated and a clipping function of diodes connected in parallel with output stage GaAs-HBT, voltage as well as current more than necessary are avoided from being applied on the output stage GaAs-HBT. The tolerance level of device destruction of the power amplifier module can be promoted and device destruction in load variation can be prevented. Further, influence of a current amplification rate of GaAs-HBT on production deviation or temperature variation can be reduced and high production yield can be achieved, which accordingly can contribute to low cost formation.
申请公布号 US2002024390(A1) 申请公布日期 2002.02.28
申请号 US20010931877 申请日期 2001.08.20
申请人 HITACHI, LTD. 发明人 YAMASHITA KIICHI;TANOUE TOMONORI;OHBU ISAO;SEKINE KENJI
分类号 H03F1/02;H03F1/30;H03F1/52;H03F3/19;H03F3/21;H03F3/24;H03F3/347;H04B1/04;H04B1/40;(IPC1-7):H03F3/04 主分类号 H03F1/02
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