| 摘要 |
PROBLEM TO BE SOLVED: To optimize the electric characteristics of a ferroelectrics capacitor, related to a semiconductor device comprising a ferroelectrics capacitor. SOLUTION: A ferroelectrics capacitor is provided which comprises a lower- side electrode in which an Ir film is formed on a TiN film, and further an IrO2 film 2 and a Pt film are laminated, and a ferroelectrics film formed on the lower-side electrode. Here, the IrO2 crystal drain in the IrO2 film is priority- oriented in <200> direction. A temperature at which the Ir film is deposited is optimized for stress control and improved yield.
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