| 发明名称 |
Semiconductor device and a method of manufacturing the same |
| 摘要 |
A method of manufacturing a semiconductor device comprises a step of preparing a substrate in which a plurality of electrode members are individually placed on one main surface thereof in separated form, a step of placing a semiconductor chip on the one main surface of the substrate and electrically connecting a plurality of electrodes formed on one main surface of the semiconductor chip and the plurality of electrode members respectively, a step of forming a resin encapsulater for sealing the semiconductor chip and the plurality of electrode members on the one main surface of the substrate, and a step of separating the semiconductor chip and the plurality of electrode members from the substrate together with the resin encapsulater.
|
| 申请公布号 |
US2002025607(A1) |
申请公布日期 |
2002.02.28 |
| 申请号 |
US20010910833 |
申请日期 |
2001.07.24 |
| 申请人 |
DANNO TADATOSHI;ARAI KATSUO;SHIMIZU ICHIO |
发明人 |
DANNO TADATOSHI;ARAI KATSUO;SHIMIZU ICHIO |
| 分类号 |
H01L23/28;H01L21/56;H01L21/60;H01L21/68;H01L23/12;H01L23/31;(IPC1-7):H01L21/44;H01L21/48;H01L21/50;H01L23/48 |
主分类号 |
H01L23/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
