Power detector using FET transistor

摘要

The present invention relates to a circuitry for detecting the power of a RF signal (7) comprising a FET transistor (1) connected in parallel to two inputs (2, 2') for supplying the RF signal and two outputs (13, 13') for detecting the power of the RF signal (7). The circuitry has a resistor (9) having a resistance larger than the drain-source resistance of the FET transistor (1). This resistor (9) is connected between one of the outputs and the source (14) of the FET transistor (19. Further a capacitor (10) is connected between one of the input and the source of the FET transistor. The gate (8) of the FET transistor is connected to ground.