| 摘要 |
PURPOSE: A method for forming a dual gate oxide layer of a semiconductor device is provided to improve reliability of a gate oxide layer, by recovering damage to a silicon substrate through a heat treatment process without an additional process before the second gate oxide layer is formed. CONSTITUTION: The first gate oxide layer and amorphous silicon(13) are sequentially formed on a semiconductor substrate(10) in which the first and second regions are defined. The amorphous silicon and the first gate oxide layer are selectively removed to form the first gate electrode on the first region of the semiconductor substrate. After a photoresist layer pattern is formed on the first region of the substrate including the first gate electrode, a heat treatment is performed regarding the surface of the semiconductor substrate in the second region so that the substrate in the second region is cured. The second gate oxide layer is formed on the second region of the cured semiconductor substrate.
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