| 摘要 |
A printed circuit (1) on a lossy substrate (2) has been provided whereby intermediate structures (11, 12, 17, 18) under the top layer strips (5) have been formed having a width being (d2) smaller than the width (w) of the strip. The intermediate structures (11, 12, 17, 18) are particular well suited for inductors (9) on silicon substrates and result in a considerable increase in the Q-factor of the inductor at microwave frequencies. |
