| 摘要 |
PROBLEM TO BE SOLVED: To obtain an apparatus for growing a single crystal, which is capable of realizing both of enlargement of diameter of the single crystal and improvement of the quality of the single crystal with a simple constitution in the growth of the single crystal such as silicon carbide by a sublimation recrystallization method. SOLUTION: Crystal growth is accelerated by providing a tapered guide member 6 so as to surround a space above a powdery raw material 7 accommodated in a crucible 8, fixing the lower end of the guide member 6 to an inner wall close to the powdery silicon carbide raw material 7 of the crucible 8, providing an opening part in the vicinity of a silicon carbide single crystal substrate 3 whose upper end is fixed to a cover body 1 and introducing a sublimation gas of the raw material 7 onto the surface of the silicon carbide single crystal substrate 3. The upper end of the guide member 6 does not contact with any of the silicon carbide single crystal substrate 3, a seed crystal supporting part 2, the lower surface of the cover body 1, and the inner wall of the crucible 8, and a portion of the sublimation gas can flow out to the outside through a gap between these members. Thereby, the stress to the growing silicon carbide single crystal 5 caused by contact with the guide member 6 can be avoided, and a high quality single crystal having a large diameter can be obtained.
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