发明名称 Method of making a support circuit with a tapered through-hole for a semiconductor chip assembly
摘要 A method of manufacturing a support circuit includes providing a conductive layer with top and bottom surfaces, providing a top etch mask on the top surface that includes an opening that exposes a portion of the top surface, providing a bottom etch mask on the bottom surface that includes an opening that exposes a portion of the bottom surface, applying an etch to the exposed portion of the top surface through the opening in the top etch mask thereby etching partially but not completely through the conductive layer and forming a recessed portion in the conductive layer below the top surface, forming an insulative base on the recessed portion without forming the insulative base on the top surface, applying an etch to the exposed portion of the bottom surface through the opening in the bottom etch mask thereby forming a routing line in the recessed portion, applying an etch to the insulative base to form an opening in the insulative base that exposes a portion of the routing line, and applying an etch to the exposed portion of the routing line through the opening in the insulative base thereby forming an opening in the routing line with tapered sidewalls. The method may also include providing an adhesive beneath the support circuit, and applying an etch that enlarges the opening in the insulative base to expose a portion of a top surface of the routing line adjacent to the opening in the routing line and that forms an opening in the adhesive beneath the opening in the routing line.
申请公布号 US6350386(B1) 申请公布日期 2002.02.26
申请号 US20000665931 申请日期 2000.09.20
申请人 LIN CHARLES W. C. 发明人 LIN CHARLES W. C.
分类号 H01L21/48;H01L23/498;(IPC1-7):H01L21/302 主分类号 H01L21/48
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