| 摘要 |
A circuit (300) employing metal-oxide-semiconductor (MOS) devices is disclosed. The circuit (300) includes a circuit portion (302) that provides a circuit function, and a body voltage adjust portion (304) which alters the body potential of the transistors within the circuit portion (302). By adjusting the body potentials of the circuit portion (300) transistors, the speed at which the circuit portion (300) can perform its function is increased. A decoder circuit embodiment (800) and sense amplifier embodiments (1200, 1300, 1500, 1600, 1700, 1800, 1900 and 2000) are also disclosed.
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