METHOD FOR FORMING CAPACITOR

摘要

PURPOSE: A method for forming a capacitor is provided to prevent the capacitor from being attacked by a wet dip-out process regarding a subsequent capacitor oxide layer, by forming a TiN layer as a barrier layer of the wet dip-out process before a storage node as a lower electrode is formed. CONSTITUTION: The capacitor oxide layer(27) is formed on a semiconductor substrate(21). The capacitor oxide layer is selectively etched to form a contact hole exposing a portion for a subsequent storage node. The barrier layer(28a) is formed on the entire surface including the contact hole to prevent an attack caused by the wet-etch of the capacitor oxide layer. A conductive layer for the storage node(29a) is formed on the barrier layer. A chemical mechanical polishing(CMP) process is performed regarding the conductive layer for the storage node and the barrier layer to expose the capacitor oxide layer and to form the storage node. The exposed capacitor oxide layer is wet-etched.