| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a silicon wafer which is favorable for forming an annealing wafer uniformly having full zero defects layers and the BMDs density within the surface of the annealing wafer suppressing an irregularity (that is, an irregularity in defect sizes within the surface of the annealing wafer in growing condition) in the zero defects layers, which are seen in the annealing wafer subsequent to a heat treatment within the surface of the annealing wafer and an irregularity in the BMDs density subsequent to a heat treatment, such as a precipitation heat treatment or a device heat treatment, within the surface of the annealing wafer, and to provide such the silicon wafer. SOLUTION: In the manufacturing method of a silicon wafer which forms the silicon wafer from a silicon single crystal pulled up after nitrogen is doped to the silicon single crystal by a CZ method and heat-treats the wafer, the wafer is grown on the condition that the ratio V/G of the pulling-up speed V (mm/min) at the time when the silicon single crystal is pulled up to a temperature gradient G (K/mm) in a solid-liquid interface is set in the ratio of 1 to 0.175 to 0.225 mm2/K.min in the extent wider than 90% in the radial direction of the pulled-up crystal and the wafer is formed by the manufacturing method.
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