发明名称 SUBSTRATE PROCESSOR
摘要 PROBLEM TO BE SOLVED: To provide a wafer processor capable of easily and accurately detecting various wafer surface states such as film thickness without stopping conveying or processing while conveying or processing a wafer not to lower a throughput. SOLUTION: In the wafer processor for conveying or processing a wafer W in the state of holding the wafer W with a robot hand 40 while having the robot hand 40 for holding the wafer W, the robot hand 40 is provided with a sensor S for measuring the film thickness of the wafer W and on the basis of a signal detected by this sensor S while conveying or processing the wafer W, the film thickness of the wafer W is measured. Thus, the metal film thickness of the wafer W can be measured without stopping/interrupting a wafer processing process and while providing a high throughput, the film thickness can be made constant.
申请公布号 JP2002057199(A) 申请公布日期 2002.02.22
申请号 JP20000244355 申请日期 2000.08.11
申请人 EBARA CORP;TOSHIBA CORP 发明人 KUNISAWA JUNJI;KIMURA NORIO;MISHIMA KOJI;MAKINO NATSUKI;MATSUDA TETSURO;KANEKO HISAFUMI
分类号 H01L21/677;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/677
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