NON-VOLATILE SEMICONDUCTOR STORAGE

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage improving yield of manufacturing by reading out data having no error even when leak is caused in a bit line. SOLUTION: This storage is provided with transistors 130-132 for reading out plural memory cells having current capability being different respectively, a transistor capability storing memory 110 storing current capability of transistors for reading out each memory cell, and a transistor capability discriminating circuit 120 discriminating whether leak is caused for each bit line or not, discriminating current capability stored in the transistor capability storing memory in accordance with magnitude of a leak current of a bit line in which leak is caused, and variably controlling drive voltage of the transistor for reading out memory cells having correspondent current capability.