| 摘要 |
PROBLEM TO BE SOLVED: To provide a junction transistor which functions as a high output power transistor having a large breakdown voltage and a small power loss. SOLUTION: An n-type GaN layer 12 is provided as an emitter layer for supplying an electron. As an electron migration layer for carrying the electron to the surface, a non-doped (intrinsic) AlxGa1-xN layer 13 (0<=x<=1) having a gradient composition of an Al containing ratio (x) is provided, and as a surface layer 4, a non-doped AlN layer 14 having a negative affinity(NEA) is provided. A control electrode 16 and a collecting electrode 21 are provided above the layer 14. An insulator layer 20 made of a material having a larger electron affinity than that of the layer 14 is interposed between the electrode 16 and the collecting electrode. Thus, the junction transistor in which the electron implanted from the layer 14 is conducted through a conduction band of the layer 20 to arrive at the collecting electrode 21 is obtained.
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