METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor device wherein an etching reaction product composed of a Si compound generated upon a dry etching process is reliably removed in a state that a favorable surface morphology is maintained. SOLUTION: After a compound semiconductor is dry etched by using a material gas including at least a gas containing a Si atom and a Cl atom in its molecular structure as a component, plasma irradiation treatment using a material gas containing at least one of an O2 gas and a N2 gas is performed. Subsequently, an etching surface is treated by using an acid solution.