发明名称 SEMICONDUCTOR DEVICE, STACKED SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a stacked semiconductor device in which a plurality of wiring boards can be secured onto a base substrate without passing them through a reflow furnace for heating. SOLUTION: In a stacked semiconductor device comprising a plurality of semiconductor devices stacked on a base substrate 41, the semiconductor device comprises a flexible semiconductor chip 36 provided with an inner electrode, a flexible wiring board 30 provided with a wiring pattern 33 being connected electrically with the inner electrode of the semiconductor chip, and an outer electrode 34 provided at an end part of the wiring board and connected electrically with the wiring pattern. The stacked semiconductor device further comprises base electrodes 42 provided on the base substrate, and solders 44 electrically connecting the outer electrode of each semiconductor device fixedly to the base electrode under a state where the plurality of semiconductor devices are stacked on the base electrode of the base substrate while aligning the position of the outer electrodes.
申请公布号 JP2002057279(A) 申请公布日期 2002.02.22
申请号 JP20010020497 申请日期 2001.01.29
申请人 TOSHIBA CORP 发明人 FUKATSU KENTA;SAITO YASUTO;ARAKAWA MASAYUKI;IGUCHI TOMOHIRO;WATANABE NAOTAKE;FUKUCHI YOSHIHARU;KOMATSU TETSUO
分类号 H01L23/12;H01L21/60;H01L23/50;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L25/065 主分类号 H01L23/12
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