发明名称 |
Method and apparatus for fabricating semiconductor laser device |
摘要 |
After profiles of two chips are recognized on intermediate stages and their positions are corrected, collets are used as electrodes and a voltage is applied to the chips on bonding stage on which the chips are bonded onto a submount. Then, the respective two chips are allowed to emit light, final position correction is performed on the basis of the light-emission point data and bonding is performed. The two chips can be bonded at narrow pitches by tilting the collets with respect to chip surfaces. Consequently, two laser chips can be bonded at narrow pitches on one submount in high position accuracy.
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申请公布号 |
US2002022289(A1) |
申请公布日期 |
2002.02.21 |
申请号 |
US20010891459 |
申请日期 |
2001.06.27 |
申请人 |
TAMAISHI MASAYUKI;KANISHI HIROSHI;ITOH YOSHIYUKI |
发明人 |
TAMAISHI MASAYUKI;KANISHI HIROSHI;ITOH YOSHIYUKI |
分类号 |
H01L21/52;H01L21/68;H01S5/02;H01S5/022;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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