| 摘要 |
PURPOSE: To provide a chemical amplification positive type resist material having high contrast between the velocity of alkali dissolution before exposure and that after exposure, high sensitivity, high resolution, a good pattern shape after exposure, superior etching resistance and superior adaptability to a process. CONSTITUTION: The resist material contains a high molecular compound having repeating units of formula (1) (where R1-R3 are each H or methyl; Z is a 2-10C linear, branched or cyclic alkylene; R4 is H, a 1-10C linear, branched or cyclic alkyl or an oxygen-containing 1-10C linear, branched or cyclic alkyl; R5 is a 5-20C tertiary alkyl; (p), (q) and (r) are each a positive number and p+q+r=1) and having a weight average molecular weight of 1,000-500,000.
|
