THIN-FILM SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY, AND MANUFACTURING METHODS FOR THEM

摘要

PURPOSE: To improve the pixel aperture rate of a thin-film semiconductor device used as a drive substrate of an active matrix liquid crystal display. CONSTITUTION: The thin-film semiconductor device has a plurality of signal wirings 12 and a mutually intersected gate wiring, and a pixel is arranged at each intersection of both wirings on an insulating substrate. Each pixel contains at least a pixel electrode, a thin-film transistor for driving the pixel electrode, and a light shading belt 5 for shielding a thin-film transistor from the external light. The source of the thin film transistor is connected with the signal wiring 12, and a drain is connected with the pixel electrode. A gate electrode (G) is connected with the gate wiring. The light shading belt 5 consists of the first conductive layer and at least a part of the shading belt 5 is used to the gate wiring. The gate electrode (G) consists of a second conductive layer which is different from the first conductive layer. The first conductive layer used as the gate wire and the second conductive layer as the gate electrode G are connected mutually in each pixel electrically via a contact hole GCN.