Method used for producing a source or drain region of a transistor in a semiconductor substrate comprises growing the source or drain region doped in situ with selective epitaxy

摘要

Method used for producing a source or drain region (17) of a transistor (32) in a semiconductor substrate (1) comprises growing the source or drain region doped in situ with selective epitaxy. Preferred Features: A mask layer (16) is arranged on a surface of the substrate. Part of the mask layer is removed, and a mask window (19) reveals a first region of the substrate surface. The selective epitaxy grows on the first region of the substrate surface and does not grow on a second region of the substrate surface covered by the mask layer. A doped profile having different concentrations of doping medium is produced on formation of the source or drain region.